The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Aug. 24, 2017
United Technologies Corporation, Farmington, CT (US);
Paul Sheedy, Bolton, CT (US);
Neal Magdefrau, Tolland, CT (US);
United Technologies Corporation, Farmington, CT (US);
Abstract
A method for atomic layer deposition of high temperature materials from single source precursors includes placing a substrate in a reaction zone in gas isolation from other reaction zones and contacting the substrate in the reaction zone with a reactant to allow atoms in the reactant to combine with reaction sites on the substrate to form a layer of the reactant on the substrate. The substrate is then placed in a purge zone and purged with a flowing inert gas. The substrate is then placed in a final reaction zone in gas isolation from the other zones wherein the final reaction zone has an atmosphere and temperature to decompose adsorbed reactant and/or form desired phases with crystallinity to form a layer of material. The substrate is then placed in a purge zone and the process is repeated until a layer of material of desired thickness is formed on the substrate.