The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Feb. 20, 2018
Rhode Island Council on Postsecondary Education, Warwick, RI (US);
Jason R. Dwyer, Providence, RI (US);
Y. M. Nuwan D. Y. Bandara, Kingston, RI (US);
Buddini Iroshika Karawdeniya, Kingston, RI (US);
Julie C. Whelan, Shannock, RI (US);
Rhode Island Council On Postsecondary Education, Warwick, RI (US);
Abstract
The invention provides a method to form and functionalize monolayers on a silicon-rich silicon nitride surface or a silicon surface formed by a nanopore fabrication method known as dielectric breakdown. Thermal, photochemical and radical processing can be used to hydrosilylate nascent silicon and silicon nitride surfaces with various reagents. The conventional need for hydrofluoric acid etching prior to coupling functional groups to the surfaces is thereby completely avoided.