The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Mar. 01, 2017
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Juergen Kositza, Munich, DE;
Herbert Gietler, Villach, AT;
Harald Huber, Glanegg, AT;
Michael Lenz, Zorneding, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 7/217 (2006.01); H01L 23/48 (2006.01); H01L 25/00 (2006.01); H02M 1/084 (2006.01); H02M 7/06 (2006.01); H02M 7/00 (2006.01); H02M 7/219 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H02M 7/217 (2013.01); H01L 25/00 (2013.01); H02M 1/084 (2013.01); H02M 7/003 (2013.01); H02M 7/06 (2013.01); H02M 7/219 (2013.01); H01L 23/48 (2013.01); H01L 25/074 (2013.01);
Abstract
A power semiconductor package includes a reference voltage terminal, a supply voltage terminal, a phase terminal, a first power transistor and a second power transistor. The first power transistor and the second power transistor are connected in series and form a low side switch and a high side switch of a half bridge circuit.