The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2019

Filed:

Dec. 18, 2018
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Jian Ming Fu, Zhubei, TW;

Chou-Sheng Wang, Hsinchu, TW;

Zhibo Tao, Palo Alto, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/335 (2006.01); H02M 1/08 (2006.01);
U.S. Cl.
CPC ...
H02M 3/33592 (2013.01); H02M 1/08 (2013.01);
Abstract

Synchronous rectifier gate voltage boost method and system. At least some of the example embodiments are methods of operating a power converter to create an output voltage, including storing energy in a field of a main transformer arranged for flyback operation, the storing during periods of time when a primary switch is conductive and current flows through a primary winding of the transformer; and then transferring energy from the field of the main transformer to the output voltage on a secondary side of the power converter; activating a secondary rectifier (SR) switch on the secondary side of the power converter during periods of time when the primary switch is non-conductive, the activating by: driving a gate of the SR switch without boost if the output voltage is above a first threshold; and driving the gate of the SR switch with boost if the output voltage is below the first threshold.


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