The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Nov. 16, 2017
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, CN;
Yadan Xiao, Shenzhen, CN;
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Shenzhen, Guangdong, CN;
Abstract
The present invention provides an inverted QD-LED and a manufacturing method thereof. The manufacturing method of an inverted QD-LED according to the present invention adopts a hydrothermal synthesis process to form a monocrystalline TiOnanorod array film for serving as an electron transport layer, wherein a plurality of monocrystalline TiOnanorods contained in the monocrystalline TiOnanorod array film are arranged in an array so as not to readily get aggregated thereby overcoming the deficiencies of inhomogeneous film formation resulting from aggregation of TiOnanometer particles, lowered electron transport efficiency, and low light extraction efficiency, and thus ensuring high-efficiency electron transport rate of the electron transport layer, increasing scattering of light to heighten light extraction efficiency, and improve luminous efficiency and stability of a device. The inverted QD-LED according to the present invention involves a monocrystalline TiOnanorod array film to serve as an electron transport layer, and thus demonstrates increased luminous efficiency and stability.