The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
May. 25, 2016
Applicant:
SK Hynix Inc., Icheon-Si, KR;
Inventors:
Seung-Mo Noh, Icheon-si, KR;
Yang-Kon Kim, Incheon-Si, KR;
Ku-Youl Jung, Icheon-si, KR;
Bo-Mi Lee, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01F 10/32 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01); G06F 3/06 (2006.01); G06F 13/28 (2006.01); G06F 13/42 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); G06F 3/061 (2013.01); G06F 3/0659 (2013.01); G06F 3/0661 (2013.01); G06F 3/0685 (2013.01); G06F 13/28 (2013.01); G06F 13/4282 (2013.01); G11C 11/161 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); G11C 11/005 (2013.01); H01L 27/222 (2013.01); H01L 43/12 (2013.01);
Abstract
An electronic device and a method for fabricating the same are provided. An electronic device according to an implementation of the disclosed technology is an electronic device including a semiconductor memory, wherein the semiconductor memory includes a magnetic tunnel junction (MTJ) structure including: a free layer having a changeable magnetization direction; a pinned layer having a pinned magnetization direction; and a tunnel barrier layer sandwiched between the free layer and the pinned layer, wherein the free layer includes a CoFeAlB alloy.