The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2019

Filed:

Dec. 22, 2017
Applicant:

Purdue Research Foundation, West Lafayette, IN (US);

Inventors:

Shehrin Sayed, West Lafayette, IN (US);

Vinh Quang Diep, Santa Clara, CA (US);

Kerem Y Camsari, Lafayette, IN (US);

Supriyo Datta, West Lafayette, IN (US);

Assignee:

Purdue Research Foundation, West Lafayette, IN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/04 (2006.01); H01L 43/06 (2006.01); H01L 43/10 (2006.01); H01L 43/14 (2006.01); H01F 41/30 (2006.01); H01F 10/32 (2006.01);
U.S. Cl.
CPC ...
H01L 43/04 (2013.01); H01L 43/06 (2013.01); H01L 43/10 (2013.01); H01L 43/14 (2013.01); H01F 10/329 (2013.01); H01F 10/3286 (2013.01); H01F 41/302 (2013.01);
Abstract

A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.


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