The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Mar. 18, 2015
Applicant:
Iucf-hyu, Seoul, KR;
Inventors:
Jea Gun Park, Seongnam-si, KR;
Du Yeong Lee, Seoul, KR;
Seung Eun Lee, Seoul, KR;
Min Su Jeon, Seongnam-si, KR;
Jong Ung Baek, Seongnam-si, KR;
Tae Hun Shim, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H01F 41/32 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); H01F 10/329 (2013.01); H01F 10/3259 (2013.01); H01F 10/3286 (2013.01); H01F 41/32 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract
The present invention provides a memory device in which lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic exchange diamagnetic layers, and an upper electrode are formed on a substrate in a laminated manner. According to the present invention, the lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400° C. or more.