Photovoltaic conversion device, photovoltaic module, and solar power generation system

Abstract

A photovoltaic conversion device () includes a semiconductor substrate (), a passivation film (), n-type amorphous semiconductor strips, p-type amorphous semiconductor strips (), and electrodes (). The passivation film () is formed on one of the surfaces of the semiconductor substrate (). The n- and p-type amorphous semiconductor strips are arranged alternately as viewed along an in-plane direction of the semiconductor substrate () (Y-axis direction). The p-type amorphous semiconductor strips () have reduced-thickness regions () at some intervals as viewed along the length direction of the p-type amorphous semiconductor strips () (X-axis direction). The n-type amorphous semiconductor strips have a similar structure. The electrodes () are provided on the p-type amorphous semiconductor strips (), but not in areas where the reduced-thickness regions () have a positive curvature r with respect to the length direction of the reduced-thickness regions (). Electrodes on the n-type amorphous semiconductor strips have a similar arrangement.