The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Jul. 19, 2019
Denso Corporation, Kariya, Aichi-pref., JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Yuichi Takeuchi, Kariya, JP;
Yu Suzuki, Toyota, JP;
Masahiro Sugimoto, Toyota, JP;
Yukihiko Watanabe, Nagakute, JP;
DENSO CORPORATION, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota-shi, JP;
Abstract
A silicon carbide semiconductor device includes: a main cell region; a sense cell region; a MOSFET arranged in each of the main cell region and the sense cell region and disposed in a semiconductor substrate having a high impurity concentration layer and a drift layer; an element isolation layer arranged between the main cell region and the sense cell region, and surrounding the sense cell region; and a plurality of electric field relaxation layers arranged between the main cell region and the sense cell region. The MOSFET includes: a base region; a source region; a plurality of deep layers; a trench gate structure; a source electrode; and a drain electrode. The deep layers and the electric field relaxation layers are arranged in a stripe pattern at a predetermined interval.