The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Oct. 21, 2013
Applicant:
Cypress Semiconductor Corporation, San Jose, CA (US);
Inventors:
Angela T. Hui, Fremont, CA (US);
Wenmei Li, Sunnyvale, CA (US);
Minh Van Ngo, Fremont, CA (US);
Amol Ramesh Joshi, Sunnyvale, CA (US);
Kuo-Tung Chang, Saratoga, CA (US);
Assignee:
Cypress Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01);
Abstract
A memory device includes a number of memory cells and a dielectric layer formed over the memory cells. The memory device also includes contacts formed in the dielectric layer and spacers formed adjacent the side surfaces of the contacts. The spacers may inhibit leakage currents from the contacts.