The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Jun. 08, 2018
Applicant:
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Inventors:
Ferdinando Iucolano, Gravina di Catania, IT;
Alessandro Chini, Modena, IT;
Assignee:
STMICROELECTRONICS S.R.L., Agrate Brianza, IT;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 29/0847 (2013.01); H01L 29/1087 (2013.01); H01L 29/2003 (2013.01); H01L 29/41725 (2013.01); H01L 29/41766 (2013.01); H01L 29/4232 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/207 (2013.01); H01L 29/4236 (2013.01);
Abstract
An HEMT includes a buffer layer, a hole-supply layer on the buffer layer, a heterostructure on the hole-supply layer, and a source electrode. The hole-supply layer is made of P-type doped semiconductor material, the buffer layer is doped with carbon, and the source electrode is in direct electrical contact with the hole-supply layer, such that the hole-supply layer can be biased to facilitate the transport of holes from the hole-supply layer to the buffer layer.