The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Jun. 04, 2018
Abb Schweiz Ag, Baden, CH;
Holger Bartolf, Brugg, CH;
Munaf Rahimo, Gänsbrunnen, CH;
Lars Knoll, Wohlenschwil, CH;
Andrei Mihaila, Baden, CH;
Renato Minamisawa, Windisch, CH;
ABB Schweiz AG, Baden, CH;
Abstract
A wide bandgap semiconductor device is comprising an (n−) doped drift layer between a first main side and a second main side. On the first main side, n doped source regions are arranged which are laterally surrounded by p doped channel layers having a channel layer depth. P+ doped well layers having a well layer depth, which is at least as large as the channel layer depth is arranged at the bottom of the source regions. A p++ doped plug extends from a depth, which is at least as deep as the source layer depth and less deep than the well layer depth, to a plug depth, which is as least as deep as the well layer depth, and having a higher doping concentration than the well layers, is arranged between the source regions and well layers. On the first main side, an ohmic contact contacts as a first main electrode the source regions, the well layers and the plug.