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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10516017 B1

PDFFull Text
Date of Patent:
Dec. 24, 2019

Filed:

Jun. 05, 2017

Semiconductor device, and manufacturing method for same

Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventors:

Kenji Hamada, Tokyo, JP;

Kazuya Konishi, Tokyo, JP;

Kohei Ebihara, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Thomas L Dickey

Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/12 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 21/04 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/046 (2013.01); H01L 29/1095 (2013.01); H01L 29/12 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/739 (2013.01); H01L 29/7393 (2013.01); H01L 29/78 (2013.01);
Abstract

A semiconductor device includes an emitter region, a base contact region, a buried region, and a carrier trap region. The emitter region and the base contact region are selectively disposed in the upper surface of the base region while being adjacent to each other. The buried region is disposed in the drift region below the base contact region or the emitter region. The carrier trap region is disposed between the buried region and the base region, and has a carrier lifetime shorter than that of the drift region. The device can improve latch-up breakdown tolerance.

Find Patent Forward Citations

Hamada, Kenji. (2019). Semiconductor device, and manufacturing method for same (U.S. Patent No. 10516017). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10516017

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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