The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Aug. 21, 2015
Hyunsuk Chun, Yongin-si, KR;
Jong-woo Park, Seongnam-si, KR;
Chul-yong Park, Hwaseong-si, KR;
Jeong-won Yoon, Suwon-si, KR;
HyunSuk Chun, Yongin-si, KR;
Jong-Woo Park, Seongnam-si, KR;
Chul-Yong Park, Hwaseong-si, KR;
Jeong-Won Yoon, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Semiconductor devices include an interlayer insulating layer on a substrate, a first capacitor structure in the interlayer insulating layer, and a conductive layer including a terminal pad on the interlayer insulating layer. The first capacitor structure includes at least one first laminate, the at least one first laminate including a first lower electrode, a first capacitor insulating layer, and a first upper electrode sequentially on the substrate. The terminal pad does not overlap with the first capacitor structure.