The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Mar. 06, 2018
Applicant:
Imec Vzw, Leuven, BE;
Inventor:
Kurt Wostyn, Lubbeek, BE;
Assignee:
IMEC VZW, Leuven, BE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/66 (2006.01); B82Y 10/00 (2011.01); H01L 21/225 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); B82Y 10/00 (2013.01); H01L 21/02664 (2013.01); H01L 21/2255 (2013.01); H01L 21/823412 (2013.01); H01L 27/0886 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/66772 (2013.01); H01L 29/775 (2013.01); H01L 29/78654 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H01L 29/6653 (2013.01); H01L 29/6681 (2013.01); H01L 29/66553 (2013.01); H01L 29/7853 (2013.01);
Abstract
At least one embodiment relates to a method for integrating SiGestructures with SiGestructures in a semiconductor device. The method includes providing a device that includes a plurality of SiGestructures, where 0≤x<1. The method also includes depositing a layer of GeOon a subset of the SiGestructures. Further, the method includes heating at least the subset of SiGestructures at a temperature high enough and for a time long enough to transform the subset of SiGestructures into a subset of SiGestructures with x'>x.