The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 2019

Filed:

Aug. 30, 2016
Applicant:

Han's Laser Technology Industry Group Co., Ltd., Shenzhen, CN;

Inventors:

Yanhua Wang, Shenzhen, CN;

Changhui Zhuang, Shenzhen, CN;

Fuhai Li, Shenzhen, CN;

Wei Zeng, Shenzhen, CN;

Wei Zhu, Shenzhen, CN;

Jiangang Yin, Shenzhen, CN;

Yunfeng Gao, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); B23K 26/53 (2014.01); B23K 26/402 (2014.01); B23K 26/38 (2014.01); B23K 26/0622 (2014.01); B23K 26/00 (2014.01); B23K 26/02 (2014.01); C01B 33/02 (2006.01); B23K 101/40 (2006.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7813 (2013.01); B23K 26/0006 (2013.01); B23K 26/02 (2013.01); B23K 26/0622 (2015.10); B23K 26/38 (2013.01); B23K 26/402 (2013.01); B23K 26/53 (2015.10); B23K 2101/40 (2018.08); B23K 2103/50 (2018.08);
Abstract

The present invention relates to a laser lift-off method of wafer. The method includes the steps as follows: focusing laser in an inside for a wafer () to form a plurality of cracking points (), the plurality of cracking points () are located on a separating surface (); and exerting, under a temperature of −400K to 0K, forces with opposite directions to opposite sides of the wafer (), thereby dividing the wafer () into two pieces along the separating surface ().


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