The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
Oct. 31, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Michael Wenyoung Tsiang, Fremont, CA (US);
Hang Yu, Woodland, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Tza-Jing Gung, San Jose, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Embodiments described herein relate to methods of forming silicon nitride films. In one embodiment, a first process gas set including a silicon-containing gas and a first nitrogen-containing gas is flowed into the process chamber. An initiation layer is deposited by applying a first radio frequency power to the first process gas set at a first frequency and a first power level. The first flow of the first nitrogen-containing gas of the first process gas set is discontinued and a second process gas set including the silicon-containing gas, a second nitrogen-containing gas, and a hydrogen-containing gas is flowed into the process chamber. A bulk silicon nitride layer is deposited on the initiation layer by applying a second RF power to the second process gas set at a second frequency higher than the first frequency and a second power level higher than the first power level.