The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
May. 16, 2016
Applicant:
Bharath Takulapalli, Chandler, AZ (US);
Inventor:
Bharath Takulapalli, Chandler, AZ (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 33/543 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 21/301 (2006.01); H01L 29/66 (2006.01); G01N 27/414 (2006.01); G01N 33/487 (2006.01); C12Q 1/68 (2018.01); G01N 33/552 (2006.01); C12Q 1/6874 (2018.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
G01N 33/54373 (2013.01); C12Q 1/6874 (2013.01); G01N 27/414 (2013.01); G01N 27/4145 (2013.01); G01N 27/4146 (2013.01); G01N 33/48721 (2013.01); G01N 33/54366 (2013.01); G01N 33/552 (2013.01); H01L 21/30604 (2013.01); H01L 29/0665 (2013.01); H01L 29/0692 (2013.01); H01L 29/1054 (2013.01); H01L 29/66666 (2013.01);
Abstract
The present disclosure provides an improved field effect transistor and device that can be used to sense and characterize a variety of materials. The field effect transistor and/or device including the transistor may be used for a variety of applications, including genome sequencing, protein sequencing, biomolecular sequencing, and detection of ions, molecules, chemicals, biomolecules, metal atoms, polymers, nanoparticles and the like.