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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10511218 B1

PDFFull Text
Date of Patent:
Dec. 17, 2019

Filed:

Sep. 12, 2016

Gate drive circuit, that supplies power to a gate of a semiconductor switching element, and carries out a driving on and off of the gate

Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventor:

Ryota Kondo, Chiyoda-ku, JP;

Assignee:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Gary L Laxton

Assistant Examiner:

Peter M Novak

Int. Cl.
CPC ...
H03K 17/687 (2006.01); H02M 1/08 (2006.01); H02M 3/158 (2006.01); H02M 7/219 (2006.01); H03K 17/567 (2006.01); H02M 7/5387 (2007.01);
U.S. Cl.
CPC ...
H02M 1/08 (2013.01); H03K 17/687 (2013.01); H02M 3/1588 (2013.01); H02M 7/219 (2013.01); H02M 7/53875 (2013.01); H03K 17/567 (2013.01); H03K 2217/0036 (2013.01); Y02B 70/1466 (2013.01);
Abstract

A gate drive circuit including a drive-on element that applies an on-state voltage to a gate of a drive target semiconductor element and a drive-off element that applies an off-state voltage to the gate is such that a recovery switch, a reactor, and a capacitor are connected in series between output terminals of the gate drive circuit as a recovery circuit that can recover a charge accumulated in input capacitance of the drive target semiconductor element when turning on, and the drive-on element, the drive-off element, and the recovery switch are controlled by a control circuit, whereby power consumption of the gate drive circuit is reduced.

Find Patent Forward Citations

Kondo, Ryota. (2019). Gate drive circuit, that supplies power to a gate of a semiconductor switching element, and carries out a driving on and off of the gate (U.S. Patent No. 10511218). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10511218

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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