The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Jul. 18, 2018
Applicant:
Massachusetts Institute of Technology, Cambridge, MA (US);
Inventors:
Andong Liu, Brookline, MA (US);
Karen K. Gleason, Cambridge, MA (US);
Minghui Wang, Quincy, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01); H01G 11/04 (2013.01); H01L 51/00 (2006.01); B05D 1/00 (2006.01); C08J 5/18 (2006.01); H01B 1/12 (2006.01); H01L 21/02 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 51/052 (2013.01); B05D 1/60 (2013.01); C08J 5/18 (2013.01); H01B 1/122 (2013.01); H01G 11/04 (2013.01); H01L 21/02118 (2013.01); H01L 21/02271 (2013.01); H01L 28/40 (2013.01); H01L 51/001 (2013.01); H01L 51/004 (2013.01); C08J 2333/26 (2013.01);
Abstract
Described are materials and methods for fabricating low-voltage MHz ion-gel-gated thin film transistor devices using patternable defect-free ionic liquid gels. Ionic liquid gels made by the initiated chemical vapor deposition methods described herein exhibit a capacitance of about 1 μF cmat about 1 MHz, and can be as thin as about 20 nm to about 400 nm.