The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

Jul. 25, 2016
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Chan Keun Park, Seoul, KR;

Sul Hee Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/14 (2010.01); H01L 33/48 (2010.01); H01L 33/04 (2010.01); H01L 33/32 (2010.01); H01L 33/50 (2010.01); H01L 33/54 (2010.01); H01L 33/62 (2010.01); H01L 33/64 (2010.01); H01L 33/22 (2010.01); H01L 33/40 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/145 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/14 (2013.01); H01L 33/32 (2013.01); H01L 33/48 (2013.01); H01L 33/502 (2013.01); H01L 33/54 (2013.01); H01L 33/62 (2013.01); H01L 33/647 (2013.01); H01L 33/0079 (2013.01); H01L 33/22 (2013.01); H01L 33/405 (2013.01); H01L 2224/48091 (2013.01);
Abstract

An embodiment relates to an ultraviolet light-emitting device, a method for manufacturing an ultraviolet light-emitting device, a light-emitting device package and an illumination apparatus. The ultraviolet light-emitting device includes a first conductive-type semiconductor layer; an active layer comprising a plurality of quantum walls and a plurality of quantum wells and disposed on the first conductive-type semiconductor layer; a second conductive-type first semiconductor layer disposed on the active layer; an electron blocking layer disposed between the active layer and the second conductive-type first semiconductor layer; and a second conductive-type second semiconductor layer disposed between the last quantum wall of the active layer and the electron blocking layer, wherein the second conductive-type second semiconductor layer includes a p-type AlGaN layer (0≤x1≤1) and a p-type InAlGaN layer (0≤x2≤1, 0≤y≤1, 0≤x2+y≤1).


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