The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Feb. 12, 2016
Applicant:
Lg Innotek Co., Ltd., Seoul, KR;
Inventor:
Young Hun Han, Seoul, KR;
Assignee:
LG INNOTEK CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/14 (2010.01); F21K 9/232 (2016.01); F21K 9/235 (2016.01); F21K 9/237 (2016.01); H01L 33/02 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/04 (2010.01); F21Y 115/10 (2016.01);
U.S. Cl.
CPC ...
H01L 33/145 (2013.01); F21K 9/232 (2016.08); F21K 9/235 (2016.08); F21K 9/237 (2016.08); H01L 33/025 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); F21Y 2115/10 (2016.08);
Abstract
Embodiments relate to a light emitting device, a light emitting device package, and a lighting system comprising the same. The light emitting device according to embodiments may comprise: a first conductivity-type semiconductor layer; an active layer on the first conductivity-type semiconductor layer; an electron blocking layer on the active layer; and a second conductivity-type semiconductor layer on the electron blocking layer. The electron blocking layer may comprise an InAlGaN based superlattice layer (wherein 0≤x≤1, 0≤y≤1).