The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

May. 26, 2017
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Mohammad Tollabi Mazraehno, Regensburg, DE;

Peter Stauß, Regensburg, DE;

Alvaro Gomez-Iglesias, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/105 (2006.01); H01L 31/0304 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/105 (2013.01); H01L 31/03048 (2013.01); H01L 31/1848 (2013.01); H01L 31/1852 (2013.01);
Abstract

A component for detecting UV radiation and a method for producing a component are disclosed. In an embodiment a component includes a semiconductor body including a first semiconductor layer, a second semiconductor layer and an intermediate active layer located therebetween, wherein the semiconductor body is based on AlGaInN with 0≤n≤1, 0≤m≤1 and n+m<1, wherein the first semiconductor layer is n-doped, wherein the second semiconductor layer is p-doped, wherein the active layer is formed with respect to its material composition in such a way that during operation of the component, arriving ultraviolet radiation is absorbed by the active layer for generating charge carrier pairs, wherein the active layer is relaxed with respect to its lattice constant, and wherein the first semiconductor layer is strained with respect to its lattice constant.


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