The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Sep. 24, 2015
Boe Technology Group Co., Ltd., Beijing, CN;
Longyan Wang, Beijing, CN;
Yongqian Li, Beijing, CN;
Cuili Gai, Beijing, CN;
Quanhu Li, Beijing, CN;
Baoxia Zhang, Beijing, CN;
Jingwen Yin, Beijing, CN;
Kun Cao, Beijing, CN;
Zhongyuan Wu, Beijing, CN;
Gang Wang, Beijing, CN;
BOE Technology Group Co., Ltd., Beijing, CN;
Abstract
A thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The thin film transistor comprises a gate electrode, an active layer, a source electrode and a drain electrode. The source electrode and the drain electrode include a first conductive layer provided on the active layer, and an etching rate of a material of the first conductive layer is greater than an etching rate of a material of the active layer in an etching liquid. The problem that the active layer of the thin film transistor is easily corroded in a back channel etch process is avoided, a number of patterning processes is reduced, and fabrication cost is reduced.