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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10510770 B1

PDFFull Text
Date of Patent:
Dec. 17, 2019

Filed:

Sep. 11, 2018

Three-dimensional memory device

Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Hisashi Harada, Yokkaichi, JP;

Jun Nishimura, Kuwana, JP;

Ayaha Hachisuga, Yokkaichi, JP;

Hiroshi Nakaki, Yokkaichi, JP;

Yukie Miyazaki, Mie, JP;

Keisuke Suda, Yokkaichi, JP;

Yu Hirotsu, Kuwana, JP;

Assignee:

TOSHIBA MEMORY CORPORATION, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Ngan V Ngo

Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 29/06 (2006.01); H01L 27/11565 (2017.01); H01L 23/528 (2006.01); H01L 29/10 (2006.01); H01L 21/28 (2006.01); H01L 27/11551 (2017.01); H01L 27/11578 (2017.01); H01L 23/522 (2006.01); H01L 27/24 (2006.01); H01L 27/06 (2006.01); H01L 21/822 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/8221 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/0688 (2013.01); H01L 27/11551 (2013.01); H01L 27/11565 (2013.01); H01L 27/11578 (2013.01); H01L 27/2481 (2013.01); H01L 29/0649 (2013.01); H01L 29/1037 (2013.01); H01L 29/40117 (2019.08); H01L 21/0217 (2013.01); H01L 21/0273 (2013.01); H01L 21/02164 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66545 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/48145 (2013.01);
Abstract

A semiconductor device includes a base body portion, a stacked body, a pedestal portion, a plate portion, and first and second columnar portions. The base body portion includes a doped semiconductor film and a semiconductor portion. The doped semiconductor film includes first and second portions. The semiconductor portion includes a first region overlapping the first portion, and a second region overlapping the second portion and being a body different from the first region. The pedestal portion is provided in the second region. The plate portion contacts the pedestal portion and the first region. The first columnar portion includes a semiconductor layer. The semiconductor layer is adjacent to the plate portion with the stacked body interposed, and contacts the first region. The second columnar portion is adjacent to the plate portion with the stacked body interposed, and is adjacent to the pedestal portion with the second region interposed.

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