The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

Sep. 29, 2017
Applicant:

Semtech Corporation, Camarillo, CA (US);

Inventors:

Maykel Ghorbanzadeh, Newbury Park, CA (US);

Jonathan Clark, Camarillo, CA (US);

William A. Russell, Thousand Oaks, CA (US);

Assignee:

Semtech Corporation, Camarillo, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 25/16 (2006.01); H01L 49/02 (2006.01); H01L 29/864 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 27/07 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 23/3114 (2013.01); H01L 23/5223 (2013.01); H01L 25/16 (2013.01); H01L 27/0288 (2013.01); H01L 27/0788 (2013.01); H01L 28/40 (2013.01); H01L 29/0649 (2013.01); H01L 29/861 (2013.01); H01L 29/864 (2013.01); H01L 2224/11 (2013.01);
Abstract

A semiconductor device includes a semiconductor die. A transient voltage suppression (TVS) structure is formed in the semiconductor die. A capacitor is formed over the semiconductor die. In one embodiment, the capacitor is formed by depositing a first conductive layer over the semiconductor die, depositing an insulating layer over the first conductive layer, and depositing a second conductive layer over the semiconductor die. In another embodiment, the capacitor is formed by forming a trench in the semiconductor die, depositing an insulating material in the trench, and depositing a conductive material in the trench.


Find Patent Forward Citations

Loading…