The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

Feb. 28, 2018
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Hitoshi Iwasaki, Tokyo, JP;

Akira Kikitsu, Kanagawa, JP;

Yoshinari Kurosaki, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 23/31 (2006.01); G11B 5/39 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); G11B 5/3932 (2013.01); H01L 23/3121 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 23/3128 (2013.01); H01L 24/48 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48227 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/3025 (2013.01);
Abstract

A semiconductor device including a semiconductor element and a first member is provided. The first member includes a first magnetic planar region separated from the semiconductor element in a first direction, and a first nonmagnetic planar region provided between the first magnetic planar region and the semiconductor element in the first direction. At least a portion of the first magnetic planar region includes FeαN, where α includes at least one selected from the group consisting of Zr, Hf, Ta, Nb, Ti, Si, and Al, xis not less than 0.5 atomic percent and not more than 10 atomic percent, and xis not less than 0.5 atomic percent and not more than 8 atomic percent.


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