The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

Aug. 31, 2016
Applicants:

Nanyang Technological University, Singapore, SG;

Massachusetts Institute of Technology, Cambridge, MA (US);

Inventors:

Kwang Hong Lee, Singapore, SG;

Eng Kian Kenneth Lee, Singapore, SG;

Chuan Seng Tan, Singapore, SG;

Eugene A. Fitzgerald, Cambridge, MA (US);

Viet Cuong Nguyen, Singapore, SG;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 29/00 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01); H01L 21/8258 (2006.01);
U.S. Cl.
CPC ...
H01L 21/56 (2013.01); H01L 21/02002 (2013.01); H01L 21/28575 (2013.01); H01L 21/76256 (2013.01); H01L 21/8238 (2013.01); H01L 23/3185 (2013.01); H01L 29/00 (2013.01); H01L 21/8258 (2013.01);
Abstract

A method of encapsulating a substrate is disclosed, in which the substrate has at least the following layers: a CMOS device layer, a layer of first semiconductor material different to silicon, and a layer of second semiconductor material, the layer of first semiconductor material arranged intermediate the CMOS device layer and the layer of second semiconductor material. The method comprises: (i) circumferentially removing a portion of the substrate at the edges; and (ii) depositing a dielectric material on the substrate to replace the portion removed at step (i) for encapsulating at least the CMOS device layer and the layer of first semiconductor material. A related substrate is also disclosed.


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