The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Jul. 13, 2016
Aledia, Grenoble, FR;
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Universite Grenoble Alpes, Saint Martin d'Heres, FR;
Philipe Gilet, Teche, FR;
Amélie Dussaigne, Saint Hilaire de la Cote, FR;
Damien Salomon, Grenoble, FR;
Joel Eymery, Sassenage, FR;
Christophe Durand, Grenoble, FR;
Aledia, Grenoble, FR;
Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris, FR;
Universite Grenoble Alpes, Saint Martin d'Heres, FR;
Abstract
The invention relates to a method for manufacturing an optoelectronic device () including wire-like, conical, or frustoconical semiconductor elements () predominantly comprising a III-V compound. Each semiconductor element extends along an axis and includes a portion (), the side surfaces () of which are covered with a shell () including at least one active region (), wherein the portions are created by continuous growth in a reactor, and wherein the temperature in the reactor varies in an uninterrupted manner from a first temperature value that favors growth of first crystallographic planes perpendicular to said axis, to a second temperature value that is strictly lower than the first temperature value and favors growth of second crystallographic planes parallel to said axis.