The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

Jun. 13, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jin-yong Choi, Seoul, KR;

Kyung-ryun Kim, Seoul, KR;

Woong-dai Kang, Seongnam-si, KR;

Hyun-chul Yoon, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/04 (2006.01); G11C 29/24 (2006.01); G11C 29/12 (2006.01); G11C 11/4094 (2006.01); G11C 11/408 (2006.01);
U.S. Cl.
CPC ...
G11C 29/12 (2013.01); G11C 11/4094 (2013.01); G11C 11/4085 (2013.01); G11C 29/04 (2013.01); G11C 29/24 (2013.01); G11C 2029/1202 (2013.01); G11C 2029/1204 (2013.01);
Abstract

A memory device including a memory cell array connected to a first bit line, first word lines, and second word lines, the memory cell array including a first memory cell and a second memory cell, the first memory cell being connected between the first word lines and the first bit line, and the second memory cell being connected between the second word line and the first bit line; a first word line driver configured to drive the first word lines; a second word line driver configured to drive the second word lines; and a test manager configured to drive second word lines to change a capacitance of the first bit line, and after the capacitance of the first bit line is changed, drive first word lines to test the first word lines.


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