The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Apr. 27, 2018
Gigadevice Semiconductor (Shanghai) Inc., Shanghai, CN;
Gigadevice Semiconductor (Beijing) Inc., Beijing, CN;
Gigadevice Semiconductor (Hefei) Inc., Hefei, CN;
Minyi Chen, Wan Chai, CN;
GIGADEVICE SEMICONDUCTOR (SHANGHAI) INC., Shanghai, CN;
GIGADEVICE SEMICONDUCTOR (BEIJING) INC., Beijing, CN;
GIGADEVICE SEMICONDUCTOR (HEFEI) INC., Hefei, CN;
Abstract
Provided are a programming method, programming apparatus and storage medium to reduce threshold voltage distribution in a non-volatile memory. The method includes performing program loops on a target page by sequentially using first programming voltages Vn; and when a predetermined condition is reached, proceeding to perform program loops on the target page by sequentially using second programming voltages Um until the target page is successfully programmed. Vn=V+(n−1)×d, where n denotes a program loop count of the first programming voltages, n is an integer greater than or equal to 1, and Vand dare all positive numbers. Um=Vn+(m−1)×d, where m denotes a program loop count of the second programming voltages, m is an integer greater than or equal to 2, and dis a positive number not equal to d