The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Mar. 24, 2017
Applicant:
Zhuhai Crystal Resonance Technologies Co., Ltd., Zhuhai, CN;
Inventor:
Dror Hurwitz, Zhuhai, CN;
Assignee:
Zhuhai Crystal Resonance Technologies Co., Ltd., Zhuhai, CN;
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/32 (2006.01); C30B 23/06 (2006.01); C30B 23/02 (2006.01); H03H 9/02 (2006.01); H03H 3/02 (2006.01);
U.S. Cl.
CPC ...
C30B 29/32 (2013.01); C30B 23/025 (2013.01); C30B 23/066 (2013.01); H03H 3/02 (2013.01); H03H 9/02031 (2013.01);
Abstract
A single crystal membrane of BaSrTiO(BST) has been fabricated for the first time using molecular beam epitaxy. The membrane typically has a thickness of 200 nm to 500 nm and the thickness may be controlled to within 1%. It may be fabricated on a sapphire wafer carrier from which it may subsequently be detached. The smoothness of the membrane has an RMS of less than 1 nm. This membrane is very promising for the next generation of RF filters.