The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

Nov. 22, 2016
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Kenichi Hamano, Tokyo, JP;

Hiroaki Sumitani, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/50 (2006.01); C30B 23/02 (2006.01); C30B 29/36 (2006.01); C23C 16/32 (2006.01); C23C 16/44 (2006.01); C23C 16/458 (2006.01); C30B 35/00 (2006.01);
U.S. Cl.
CPC ...
C30B 23/025 (2013.01); C23C 14/50 (2013.01); C23C 16/325 (2013.01); C23C 16/4404 (2013.01); C23C 16/4581 (2013.01); C30B 29/36 (2013.01); C30B 35/002 (2013.01);
Abstract

A substrate mounting member according to the present invention is a member for mounting a SiC substrate for epitaxial growth, which includes a wafer plate including a SiC polycrystal, and a supporting plate configured to be placed on the wafer plate, include no SiC polycrystal and have a surface serving as a SiC substrate placing surface, the surface being on the side opposite to a surface in contact with the wafer plate, and in which a thickness h [mm] of the supporting plate satisfies an expression h≤3 pa(1−v){(5+v)/(1+v)}/16E when a force applied to a unit area of the supporting plate by a self-weight of the supporting plate and by the SiC substrate is represented as p [N/mm], a radius of the supporting plate as a [mm], a Poisson's ratio as v and a Young's modulus as E [MPa].


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