The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

Jan. 04, 2017
Applicant:

Purdue Research Foundation, West Lafayette, IN (US);

Inventor:

Kevin Paul Trumble, West Lafayette, IN (US);

Assignee:

Purdue Research Foundation, West Lafayette, IN (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B22D 27/04 (2006.01); C22C 9/05 (2006.01); C22C 1/02 (2006.01); B22C 9/06 (2006.01); B22D 21/00 (2006.01);
U.S. Cl.
CPC ...
B22D 27/045 (2013.01); B22C 9/061 (2013.01); B22D 21/005 (2013.01); C22C 1/02 (2013.01); C22C 9/05 (2013.01);
Abstract

Processes are provided that include providing a copper-manganese alloy containing copper and manganese and having an amount of manganese that is at least 32 weight percent and not more than 40 weight percent of a combined total amount of the copper and manganese in the copper-manganese alloy, and casting the copper-manganese alloy by multidirectional solidification to produce a product in the form of a casting. The copper-manganese alloy has a composition sufficiently near the congruent melting point of the Cu—Mn alloy system to sufficiently avoid dendritic growth during the multidirectional solidification of the copper-manganese alloy to avoid the formation of microporosity attributable to dendritic growth. The product has a cast microstructure having a cellular and/or planar solidification structure free of dendritic growth and having multidirectional columnar grains.


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