The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

Jan. 21, 2016
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Hefei, Anhui, CN;

Inventors:

Zhiyuan Lin, Beijing, CN;

Yinhu Huang, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H05K 3/06 (2006.01); H05K 3/00 (2006.01);
U.S. Cl.
CPC ...
H05K 3/068 (2013.01); H01L 21/6708 (2013.01); H01L 21/67103 (2013.01); H05K 3/002 (2013.01); H05K 3/0085 (2013.01); H05K 3/067 (2013.01); H05K 2203/10 (2013.01); H05K 2203/1105 (2013.01);
Abstract

The present invention discloses a carrying device, a wet etching apparatus and a usage method thereof. The carrying device comprises a carrying body and a heating unit both disposed under a to-be-processed substrate, the carrying body is used for carrying the to-be-processed substrate such that the to-be-processed substrate is placed inclined; the heating unit is used for heating the to-be-processed substrate, such that temperature of the to-be-processed substrate rises gradually from a top portion to a bottom portion thereof. In the technical solution of the present invention, by disposing the heating unit under the to-be-processed substrate, the temperature of the to-be-processed substrate rises gradually from the top portion to the bottom portion thereof, thus etch rate of the etchant on the bottom portion of the to-be-processed substrate can be increased, and uniformity of etch rate in the inclined wet etching process is improved.


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