The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

Jan. 02, 2019
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon-si, KR;

Inventors:

Byeong Hak Jo, Suwon-si, KR;

Hyun Paek, Suwon-si, KR;

Jeong Hoon Kim, Suwon-si, KR;

Yoo Hwan Kim, Suwon-si, KR;

Yoo Sam Na, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04M 1/00 (2006.01); H04B 1/40 (2015.01); H03K 17/687 (2006.01); H03K 17/28 (2006.01); H03K 17/693 (2006.01);
U.S. Cl.
CPC ...
H04B 1/40 (2013.01); H03K 17/28 (2013.01); H03K 17/6874 (2013.01); H03K 17/693 (2013.01);
Abstract

A radio frequency switching device includes a switching circuit including first and second transistors; a gate resistor circuit including a first gate resistor and a second gate resistor, the first gate resistor connected to a gate of the first transistor and the second gate resistor connected to a gate of the second transistor; a gate buffer circuit including a first gate buffer and a second gate buffer, the first gate buffer being connected to the first gate resistor to provide a first gate signal to the first transistor through the first gate resistor, the second gate buffer being connected to the second gate resistor to provide a second gate signal to the second transistor through the second gate resistor; and a delay circuit to generate the first gate signal having a first switching time and the second gate signal having a second switching time different than the first switching time.


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