The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

Aug. 18, 2017
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Albert Kumar, San Jose, CA (US);

Ramaprasath Vilangudipitchai, San Diego, CA (US);

Vasisht Vadi, San Diego, CA (US);

Paul Penzes, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/0185 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H03K 19/018507 (2013.01); H01L 27/0629 (2013.01);
Abstract

A level shifter according to some embodiments is disclosed. In some embodiments, a level shifter includes a middle-of-the-line (MOL) capacitor; and a circuit including at least one thin-film transistor coupled to the MOL capacitor, wherein an input voltage provided to the MOL capacitor is split between the MOL capacitor and the circuit. The MOL capacitor can be formed with a contact strip adjacent to a gate structure. A method of forming a level shifter using thin-oxide technologies includes forming a middle-of-the-line (MOL) capacitor; forming a circuit with one or more thin-film transistors; and coupling the MOL capacitor to the circuit such that an input voltage provided at the MOL capacitor is split between the MOL capacitor and the circuit.


Find Patent Forward Citations

Loading…