The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

Nov. 29, 2016
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Shota Saito, Fukuoka, JP;

Keisuke Nakamoto, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/042 (2006.01); H03K 17/082 (2006.01); H02M 3/15 (2006.01); H02M 1/08 (2006.01); H03K 17/567 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 17/567 (2013.01); H03K 17/6871 (2013.01);
Abstract

A plurality of gate driver units () respectively drives a plurality of semiconductor switching devices (SW,SW) connected in parallel. A control circuit () controls the plurality of gate driver units (). Each gate driver unit () includes a gate driver () supplying a gate voltage to a gate of the corresponding semiconductor switching device (SW,SW), and a potential difference measuring unit () measuring a potential difference (Va) arising due to wiring inductance on an emitter side of the corresponding semiconductor switching device (SW,SW) for each cycle of an output frequency. The control circuit () adjusts the gate voltage (VGE) supplied by the gate driver () of each gate driver unit () such that the potential differences (Va) of the plurality of semiconductor switching devices (SW,SW) in turn-on or turn-off switching operation become same as each other.


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