The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

Jun. 15, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Chul Joon Heo, Busan, KR;

Kyung Bae Park, Hwaseong-si, KR;

Sung Young Yun, Suwon-si, KR;

Tadao Yagi, Hwaseong-si, KR;

Takkyun Ro, Hwaseong-si, KR;

Gae Hwang Lee, Seongnam-si, KR;

Kwang Hee Lee, Yongin-si, KR;

Yong Wan Jin, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/30 (2006.01); H01L 51/00 (2006.01); H01L 51/42 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5253 (2013.01); H01L 27/307 (2013.01); H01L 51/0062 (2013.01); H01L 51/424 (2013.01); H01L 51/4246 (2013.01); H01L 51/4253 (2013.01); Y02E 10/549 (2013.01);
Abstract

An organic photoelectronic device includes a first electrode and a second electrode facing each other, and first and second photoelectronic conversion layers between the first electrode and the second electrode. The first and second photoelectronic conversion layers include a p-type semiconductor and an n-type semiconductor. The first photoelectronic conversion layer has a first composition ratio (p/n) of the p-type semiconductor relative to the n-type semiconductor, the second photoelectronic conversion layer has a second composition ratio (p/n) of the p-type semiconductor relative to the n-type semiconductor, and the first composition ratio (p/n) is greater than the second composition ratio (p/n).


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