The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

Sep. 20, 2016
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Yanzhao Li, Beijing, CN;

Boris Kristal, Beijing, CN;

Chieh Hsing Chung, Beijing, CN;

Long Wang, Beijing, CN;

Zhuo Chen, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/56 (2006.01); H01L 51/50 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0015 (2013.01); H01L 51/0027 (2013.01); H01L 51/502 (2013.01); H01L 51/56 (2013.01); H01L 27/3211 (2013.01); H01L 51/0035 (2013.01); H01L 51/0037 (2013.01); H01L 51/0039 (2013.01); H01L 51/0077 (2013.01); H01L 51/5056 (2013.01); H01L 51/5072 (2013.01);
Abstract

Embodiments of the present disclosure relate to a quantum dot light emitting diode subpixel array, a method for manufacturing the same, and a display device. The method for manufacturing the quantum dot light emitting diode subpixel array according to embodiments of the present disclosure comprises a quantum dot accepting layer forming step of forming a quantum dot accepting layer on a substrate; a thermosensitive quantum dot material layer applying step of applying a thermosensitive quantum dot material layer containing a thermosensitive organic ligand on the quantum dot accepting layer; and a thermosensitive quantum dot material transferring step of subjecting the organic ligand of the thermosensitive quantum dot material in a predetermined area of the thermosensitive quantum dot material layer to a chemical reaction by heating such that the thermosensitive quantum dot material in the predetermined area is transferred onto a corresponding subpixel region on the quantum dot accepting layer.


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