The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Jun. 26, 2018
International Business Machines Corporation, Armonk, NY (US);
Takashi Ando, Tuckahoe, NY (US);
Eduard A. Cartier, New York, NY (US);
Adam M. Pyzyna, Cortlandt Manor, NY (US);
John Bruley, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
CMOS-compatible non-filamentary RRAM devices and techniques for formation thereof are provided. In one aspect, a method of forming a non-filamentary RRAM device includes: depositing a base oxide layer (e.g., hafnium oxide) on a bottom electrode; depositing a cap layer (e.g., amorphous silicon) on the base oxide layer; and depositing a top electrode on the cap layer, wherein the cap layer and the top electrode are deposited in-situ without any air exposure in between such that there is an absence of oxide at an interface between the cap layer and the top electrode. A low resistivity layer can optionally be deposited on the top electrode. An RRAM device and a computing device having a crossbar array of the present RRAM cells are also provided.