The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Dec. 29, 2015
Massachusetts Institute of Technology, Cambridge, MA (US);
Kristen Ann Sunter, Somerville, MA (US);
Faraz Najafi, Cambridge, MA (US);
Adam Nykoruk McCaughan, Somerville, MA (US);
Karl Kimon Berggren, Arlington, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
Superconducting nanowire avalanche photodetectors (SNAPs) have using meandering nanowires to detect incident photons. When a superconducting nanowire absorbs a photon, it switches from a superconducting state to a resistive state, producing a change in voltage that can be measured across the nanowire. A SNAP may include multiple nanowires in order to increase the fill factor of the SNAP's active area and the SNAP's detection efficiency. But using multiple meandering nanowires to achieve high fill-factor in SNAPs can lead to current crowding at bends in the nanowires. This current crowding degrades SNAP performance by decreasing the switching current, which the current at which the nanowire transitions from a superconducting state to a resistive state. Fortunately, staggering the bends in the nanowires reduces current crowding, increasing the nanowire switching current, which in turn increases the SNAP dynamic range.