The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

Jan. 18, 2018
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Li-Ming Chang, Hsinchu, TW;

Tzung-Shiun Yeh, Hsinchu, TW;

Chien-Fu Shen, Hsinchu, TW;

Yu-Rui Lin, Hsinchu, TW;

Chen Ou, Hsinchu, TW;

Hsin-Ying Wang, Hsinchu, TW;

Hui-Chun Yeh, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 33/20 (2010.01); H01L 33/06 (2010.01); H01L 33/30 (2010.01); F21Y 115/10 (2016.01); H01L 33/22 (2010.01); H01L 23/60 (2006.01); F21K 9/232 (2016.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/14 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 33/20 (2013.01); F21K 9/232 (2016.08); F21Y 2115/10 (2016.08); H01L 23/60 (2013.01); H01L 33/0016 (2013.01); H01L 33/06 (2013.01); H01L 33/14 (2013.01); H01L 33/22 (2013.01); H01L 33/30 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01);
Abstract

A light-emitting element, includes a first edge, a second edge, a third edge and a fourth edge; a substrate; a semiconductor stack formed on the substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a transparent conductive layer, formed on the second semiconductor layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode extending from the first pad electrode; and a second electrode formed on the first second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; wherein the first finger electrode is disposed at and along the first edge; and wherein in top view, an overlapping portions of the first finger electrode and the second finger electrode are non-parallel.


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