The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Jun. 22, 2018
Kaneka Corporation, Osaka, JP;
Toshihiko Uto, Osaka, JP;
Daisuke Adachi, Osaka, JP;
KANEKA CORPORATION, Osaka, JP;
Abstract
In manufacturing a crystalline silicon-based solar cell, a first intrinsic thin-film is formed on a conductive single-crystalline silicon substrate, and then a hydrogen plasma etching is performed. A second intrinsic thin-film is formed on the first intrinsic thin-film after the hydrogen plasma etching, and a conductive silicon-based thin-film is formed on the second intrinsic thin-film. The second intrinsic thin-film is formed by plasma-enhanced CVD with a silicon-containing gas and hydrogen being introduced into a CVD chamber. The amount of the hydrogen introduced into the CVD chamber during formation of the second intrinsic thin-film is 50 to 500 times an introduction amount of the silicon-containing gas.