Photovoltaic device

Abstract

A photovoltaic device and a photovoltaic module are provided that suppressing diffusion of boron and thereby improving conversion efficiency. A photovoltaic deviceincludes: a semiconductor substrate; an intrinsic amorphous semiconductor layerprovided on the semiconductor substrate; n-type amorphous semiconductor stripscontaining phosphorus as a dopant; and p-type amorphous semiconductor stripscontaining boron as a dopant, the n- and p-type amorphous semiconductor stripsandbeing provided alternately on the intrinsic amorphous semiconductor layeras viewed along an in-plane direction. Each n-type amorphous semiconductor stripincludes a reduced-thickness region TD(n) on a face thereof adjacent to one of the p-type amorphous semiconductor strips. Each p-type amorphous semiconductor stripincludes a reduced-thickness region TD(p) on a face thereof adjacent to one of the n-type amorphous semiconductor strips. The reduced-thickness region TD(p) of the p-type amorphous semiconductor striphas a steeper angle of inclination than does the reduced-thickness region TD(n) of the n-type amorphous semiconductor strip