The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Aug. 29, 2016
Applicant:
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Inventors:
Naoki Asano, Sakai, JP;
Masamichi Kobayashi, Sakai, JP;
Assignee:
SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/0747 (2012.01); H01L 31/075 (2012.01);
U.S. Cl.
CPC ...
H01L 31/022416 (2013.01); H01L 31/0224 (2013.01); H01L 31/075 (2013.01); H01L 31/0747 (2013.01); Y02E 10/50 (2013.01);
Abstract
A photoelectric conversion element includes an n-type semiconductor substrate, a p-type amorphous semiconductor film on the side of a first surface and side surface of the semiconductor substrate, an n-type amorphous semiconductor film on the first surface side of the semiconductor substrate, a p-electrode on the p-type amorphous semiconductor film, and an n-electrode on the n-type amorphous semiconductor film. The p-electrode is located on the p-type amorphous semiconductor film, which is placed on the first surface side and side surface of the semiconductor substrate.