The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Oct. 05, 2017
Avago Technologies International Sales Pte. Limited;
AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED, Singapore, SG;
Abstract
A finFET LDMOS semiconductor device includes a first well disposed adjacent to a second well on a substrate and a third well disposed on the substrate, wherein the second well is disposed between the first well and the third well. Additionally, the finFET LDMOS semiconductor device includes a source disposed on the first well, a fin at least partially disposed on the first well and adjacent to the source, a drain disposed on the third well, a shallow trench isolation (STI) disposed at least partially in the third well, and a STI protection structure disposed on the substrate between the second well and the third well and along a side of the STI that is closest to the source, wherein the STI protection structure is configured to discourage a drain to source current from flowing along the side of the STI that is closest to the source.