The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Dec. 13, 2017
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventor:
Yu Wen, Beijing, CN;
Assignee:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41733 (2013.01); H01L 27/1222 (2013.01); H01L 29/66765 (2013.01); H01L 29/78669 (2013.01); H01L 27/3262 (2013.01);
Abstract
A thin film transistor includes a gate pattern, a gate insulating layer, an active layer and a source-drain pattern, which are all arranged on a substrate. The source-drain pattern includes a source electrode and a drain electrode. An orthographic projection of the drain electrode on the substrate is shaped like a ring, and an orthographic projection of the source electrode on the substrate is elliptic or circular. The drain electrode is arranged around the source electrode.