The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

Dec. 28, 2017
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Peter Moens, Erwetegem, BE;

Piet Vanmeerbeek, Sleidinge, BE;

Gary H. Loechelt, Tempe, AZ (US);

John Michael Parsey, Jr., Phoenix, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/267 (2006.01); H01L 29/739 (2006.01); H01L 29/10 (2006.01); H01L 29/36 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 21/0254 (2013.01); H01L 21/02532 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 29/0634 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/0865 (2013.01); H01L 29/0886 (2013.01); H01L 29/1004 (2013.01); H01L 29/1033 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/4236 (2013.01); H01L 29/66348 (2013.01); H01L 29/66522 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01);
Abstract

An electronic device can include a transistor structure. In an embodiment, the transistor structure can include a channel region and a drift structure including different semiconductor base materials. In another embodiment, the transistor structure can include a source region and a drain structure including a first region, wherein the source region and the first region include different semiconductor base materials and have the same conductivity type. In another aspect, a process of forming an electronic device can include forming a semiconductor layer; forming a body region; patterning the body region and the semiconductor layer to define a trench having a sidewall; forming a first region of a drain structure along the sidewall of the trench, wherein the first region and body region include different semiconductor base materials and different conductivity types.


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